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| N-CHANNEL 30V - 0.0032 - 120A DPAK/IPAK/TO-220 STripFETTM II POWER MOSFET TYPE STB200NF03/-1 STP200NF03 s s s STP200NF03 STB200NF03 STB200NF03-1 AUTOMOTIVE SPECIFIC VDSS 30 V 30 V RDS(on) <0.0036 <0.0036 ID 120 A(**) 120 A(**) 3 1 TYPICAL RDS(on) = 0.0032 STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED 3 12 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS DPAK TO-263 IPAK TO-262 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM Ordering Information SALES TYPE STB200NF03T4 STP200NF03 STB200NF03-1 MARKING B200NF03 P200NF03 B200NF03 PACKAGE D2PAK TO-220 I2PAK PACKAGING TAPE & REEL TUBE TUBE ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) VDGR VGS Gate- source Voltage Drain Current (continuous) at TC = 25C ID(**) Drain Current (continuous) at TC = 100C ID IDM(*) Drain Current (pulsed) Ptot Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope dv/dt (1) EAS (2) Single Pulse Avalanche Energy Tstg Storage Temperature Tj Operating Junction Temperature (*) Pulse width limited by safe operating area. (**) Current Limited by Package Value 30 30 20 120 120 480 300 2.0 1.5 1.45 -55 to 175 Unit V V V A A A W W/C V/ns J C (1) ISD 120A, di/dt 400A/s, VDD V (BR)DSS, T j TJMAX (2) Starting T j = 25 oC, ID = 60 A, VDD = 25 V October 2002 1/14 STB200NF03/-1 STP200NF03 THERMAL DATA Rthj-case Rthj-amb Rthj-pcb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Junction-pcb Maximum Lead Temperature For Soldering Purpose (for 10 sec. 1.6 mm from case) Max Max Max Typ 0.5 62.5 see curve on page 6 300 C/W C/W C/W C ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A VGS = 0 Min. 30 1 10 100 Typ. Max. Unit V A A nA VDS = Max Rating VDS = Max Rating TC = 125C VGS = 20V IGSS ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 A ID = 60 A Min. 2 0.0032 Typ. Max. 4 0.0036 Unit V DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V ID = 60 A Min. Typ. 200 4950 1750 280 Max. Unit S pF pF pF VDS = 25V, f = 1 MHz, VGS = 0 2/14 STB200NF03/-1 STP200NF03 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 60 A VDD = 15 V RG = 4.7 VGS = 10 V (Resistive Load, Figure 3) VDD= 24V ID= 120A VGS= 10V Min. Typ. 30 195 113 32 41 140 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 60 A VDD = 15 V RG = 4.7, VGS = 10 V (Resistive Load, Figure 3) Min. Typ. 75 60 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 120 A VGS = 0 70 170 5 Test Conditions Min. Typ. Max. 120 480 1.3 Unit A A V ns nC A di/dt = 100A/s ISD = 120 A VDD = 25 V Tj = 150C (see test circuit, Figure 5) (*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/14 STB200NF03/-1 STP200NF03 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/14 STB200NF03/-1 STP200NF03 Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature. Power Derating vs Tc . Max Id Current vs Tc. . 5/14 STB200NF03/-1 STP200NF03 Thermal Resistance Rthj-a vs PCB Copper Area Max Power Dissipation vs PCB Copper Area Allowable Iav vs. Time in Avalanche The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive, under the following conditions: PD(AVE) = 0.5 * (1.3 * BVDSS * IAV) EAS(AR) = PD(AVE) * tAV Where: IAV is the Allowable Current in Avalanche PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse) tAV is the Time in Avalanche To derate above 25 oC, at fixed IAV, the following equation must be applied: IAV = 2 * (Tjmax - TCASE)/ (1.3 * BVDSS * Zth) Where: Zth = K * Rth is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV . 6/14 STB200NF03/-1 STP200NF03 SPICE THERMAL MODEL Parameter CTHERM1 CTHERM2 CTHERM3 CTHERM4 Node 5-4 4-3 3-2 2-1 Value 0.011 0.0012 0.05 0.1 RTHERM1 RTHERM2 RTHERM3 RTHERM4 5-4 4-3 3-2 2-1 0.09 0.02 0.11 0.17 7/14 STB200NF03/-1 STP200NF03 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 3.1: Switching Time Waveform Fig. 4: Gate Charge Test Circuit Fig. 4.1: Gate Charge Test Waveform 8/14 STB200NF03/-1 STP200NF03 Fig. 5: Diode Switching Test Circuit Fig. 5.1: Diode Recovery Times Waveform 9/14 STB200NF03/-1 STP200NF03 DPAK MECHANICAL DATA DIM. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 0 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.591 0.050 0.055 0.094 0.015 8 mm. MIN. 4.4 2.49 0.03 0.7 1.14 0.45 1.21 8.95 8 10.4 0.394 0.334 0.208 0.624 0.055 0.069 0.126 TYP. MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.028 0.045 0.018 0.048 0.352 0.315 0.409 inch. TYP. TYP. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 10/14 STB200NF03/-1 STP200NF03 TO-262 (I2PAK) MECHANICAL DATA mm MIN. A A1 B B2 C C2 D e E L L1 L2 4.4 2.49 0.7 1.14 0.45 1.23 8.95 2.4 10 13.1 3.48 1.27 TYP. MAX. 4.6 2.69 0.93 1.7 0.6 1.36 9.35 2.7 10.4 13.6 3.78 1.4 MIN. 0.173 0.098 0.027 0.044 0.017 0.048 0.352 0.094 0.393 0.515 0.137 0.050 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.106 0.409 0.531 0.149 0.055 DIM. A C2 B2 B E L1 L2 D L P011P5/E e A1 C 11/14 STB200NF03/-1 STP200NF03 TO-220 MECHANICAL DATA DIM. A C D E F F1 F2 G G1 H2 L2 L3 L4 L5 L6 L7 L9 DIA 13 2.65 15.25 6.20 3.50 3.75 mm. MIN. 4.4 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 16.40 28.90 14 2.95 15.75 6.60 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 TYP. MAX. 4.6 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 1.137 0.551 0.116 0.620 0.260 0.154 0.151 inch. TYP. TYP. 0.181 0.051 0.107 0.027 0.034 0.067 0.067 0.203 0.106 0.409 12/14 STB200NF03/-1 STP200NF03 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 BASE QTY 1000 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.795 0.960 3.937 1.197 BULK QTY 1000 1.039 0.520 MIN. inch MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 0.35 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 MIN. 0.413 0.618 0.059 0.062 0.065 0.449 0.189 0.153 0.468 0075 1.574 .0.0098 0.933 0.0137 0.956 inch MAX. 0.421 0.626 0.063 0.063 0.073 0.456 0.197 0.161 0.476 0.082 * on sales type 13/14 STB200NF03/-1 STP200NF03 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 14/14 |
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